M59DR008E |
RFQ for M59DR008E Required Field |
 |
| Product | Manufacturers | Pack | D/C |
| M59DR008E | - | BGA0707 | 03+ |
The M59DR008 is an 8 Mbit non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry. For Program and Erase operations the necessary high voltages are generated internally.The device supports asynchronous page
mode from all the blocks of the memory array.
The array matrix organization allows each block to be erased and reprogrammed without affecting other blocks. All blocks are protected against programming and erase at Power Up. Blocks can be unprotected to make changes in the application and then reprotected.
Instructions for Read/Reset, Auto Select, Write Configuration Register, Programming, Block Erase, Bank Erase, Erase Suspend, Erase Resume,Block Protect, Block Unprotect, Block Locking,CFI Query, are written to the memory through a Command Interface using standard microprocessor write timings.
The device is offered in TSOP48 (12 x 20 mm) and in FBGA48 0.75 mm ball pitch packages.When shipped all bits of the M59DR008 device are at the logical level '1'.
Features |
| `SUPPLY VOLTAGE VDD = VDDQ = 1.65V to 2.2V: for Program,Erase and Read VPP = 12V: optional Supply Voltage for fast Program and Erase`ASYNCHRONOUS PAGE MODE READ Page Width: 4 words Page Access: 35ns Random Access: 100ns` PROGRAMMING TIME 10s by Word typical Double Word Programming Option` MEMORY BLOCKS Dual Bank Memory Array: 4 Mbit - 4 Mbit Parameter Blocks (Top or Bottom location) Main Blocks` DUAL BANK OPERATIONS Read within one Bank while Program or Erase within the other No delay between Read and Write operations` BLOCK PROTECTION/UNPROTECTION All Blocks protected at Power Up Any combination of Blocks can be protected WP for Block Locking` COMMON FLASH INTERFACE (CFI)` 64 bit SECURITY CODE` ERASE SUSPEND and RESUME MODES` 100,000 PROGRAM/ERASE CYCLES per BLOCK` 20 YEARS DATA RETENTION Defectivity below 1ppm/year` ELECTRONIC SIGNATURE Manufacturer Code: 20h Device Code, M59DR008E: A2h Device Code, M59DR008F: A3h |
|
Symbol |
Parameter |
Value
|
Unit |
|
TA |
Ambient Operating Temperature(2) |
-40to85 |
°C |
|
TBIAS |
Temperature Under Bias |
-40to125 |
°C |
|
TSTG |
Storage Temperature |
-55to155 |
°C |
|
VIO(3) |
Input or Output Voltage |
-0.5toVDDQ+0.5 |
V |
|
VDD,VDDQ |
Supply Voltage |
-0.5to2.7 |
V |
|
VPP |
Program Voltage |
-0.5to13 |
V |
Note: 1. Except for the rating "Operating Temperature Range", stresses above those listed in the Table "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above those
